Vertical GaN Power Transistor Concept for High-Current Converters

The Slovak Academy of Sciences (SAS) offers a new unipolar vertical GaN transistor concept with an insulating channel, designed to operate in enhancement mode and to achieve high current without the need to parallel multiple channels—a key advantage for massive power devices.

Competitive advantages:

• Simplified fabrication of power vertical transistors (no nano-shaping required) with minimal parasitic effects

• Expected cost reduction for devices using this component

• Expected reduction of cooling requirements, supporting more compact and efficient power electronics

Where it can be used:

• Highly efficient electric power converters

• Electric power generation and distribution

• Charging and propulsion units for electric cars

IP & availability: functionality verified in laboratory conditions; priority and EP patent application.

We are looking for an industrial partner for licensing or sale of the technology.

Commercialization is supported by the Technology Transfer Office of SAS, which can facilitate the licensing/sale process, contracting, and communication with the IP-holding SAS organization.