Co-develop rad-hard GaN SiP modules for space power systems

Seeking collaboration with Companies, Swiss research institutes and system integrators for R&D under Innosuisse/ESA-PRODEX.

Project scope:

• Co-develop high-performance rad-hard GaN SiP modules combining HV-CMOS driver ASIC and GaN FET in compact SMT format.

• Targeting space-grade applications: DC–DC converters, motor drives, LiDAR, wireless charging, avionics, nanosatellites, rovers.

• Focus on radiation tolerance , SWaP‑C² optimization, and high-frequency operation.

R&D objectives:

1. ASIC development: HV-CMOS driver with adaptive analog control for fast switching (ZVS, EMI reduction).

2. SiP integration: robust package design optimized for thermal, EMI, and mechanical reliability.

3. Testing & validation: space-grade environmental testing (radiation, thermal cycling, vibration).

Why partner with us?

• Deep-tech expertise in GaN driver design & packaging from Swiss startup.

• Innosuisse alignment: strong innovation, clear IP potential, academic‑industry synergy.

• Market relevance: addresses critical needs in space-grade power electronics, enabling future missions.

Interested in joining a cutting-edge space‑power R&D initiative with commercialization potential? Let’s connect!