III-V LAb

III-V Lab is the joint laboratory ("Lab to Fab") of NOKIA, THALES and CEA-LETI specialized in III-V semiconductors co-integrated on silicon for microelectronics & photonics.

III-V Lab performs under the same roof, materials and components design, substrate epitaxy, component manufacturing, packaging, test and characterization.

The III-V Lab teams, made up of around 120 researchers and 20 doctoral students, are located in two French centers of scientific and technological excellence:

• Paris-Saclay campus: 2000 m2 of clean rooms with a manufacturing capacity of 2 to 4 inch wafers in III-V technologies (InP, GaN, GaAs, InSb, etc.)

• CEA-LETI site in Grenoble: 200-300 mm lines for III-V integration on Silicon

III-V Lab's activities meet the needs of many markets such as Defense, Space, Telecommunications, Mobility, Medical, Industrial Sensors or Instrumentation through the development of world-leading components and technologies in close connection with the academic world and its industrial partners in France and Europe. With his “Lab to Fab” business model, III-V Lab contributes to the competitiveness and sovereignty of the semiconductor industry in France and Europe through its capability to produce in small volume as a pilot line and through his research areas, which are mainly structured around the following themes:

• RF HEMT GaN power microelectronic components for high-energy-efficiency transmitters

• HBT InP microelectronic components for high-speed electronics beyond 130 GHz

• High-performance lasers from 780 nm to infrared up to 10 µm wavelength

• High-sensitivity optical detectors and imagers

• Photonic integrated circuits (PIC) on InP, silicon, silicon oxide and silicon nitride

• III-V heterogeneous integration on Silicon

• Enabling technologies for Quantum applications