New high voltage device LIGBT on silicon smalller and cheaper, 10 times smaller se figure

The new high voltage device takes 10 times less area than competitive devices in Si, even better than SiC at 1000 V. Smaller and less expensive power supplies working from off line 110 -220V, the same for taking energy out batteries for working tools and for transportation 2-wheels 3-wheels and 4-wheels smaller cars.

Starting from from a new patented concept a new device has been simulated, results are shown in figure and more results at comheat.se.

We are looking for a partner for manufacturing prototype of the simulated devices. Starting from a available LDMOS technology the new device may be implemented with some additional masks. Starting from a BCD concept may be a safer way which is rougly outlined at comheat.se

For more information see comheat.se or contact eklund.kh@comheat.se.